Machine and process
We detail here the machine and the processes we regularly support in our machine. All other process need to be discussed with the staff member before being performed in the Centre.
The machine is working
Description: The oxidation furnace is used for dry and wet oxidation of silicon wafers. The maximum temperature used is about 1100°C allowing to normally reach a thickness of 1µm oxide. Thicker oxide may be grown (up to 2µm) but a special request will be needed as it will last more than one day.
Person in charge: Chollet Franck
Authorized operators: Undergraduate Research Student Research Staff
Note that when you are logged as a user, the process list includes the process cost.
The Booking cost is the cost when you operate the equipment yourself (and book it) while the Request cost is when a Centre Staff is performing the process for you.